Planar gate metal oxide field effect transistor (MOSFET) based on silicon carbide (SiC) is developed by Lonten. Lonten SiC MOSFET features small cell pitch, JFET implantation design, advanced thinning technology and field limiting ring termination structure，leading to a good compromise among on-state resistance, leakage current and breakdown voltage. Meanwhile, SiC MOSFET exhibits fast switching and good anti-avalanche ability.
TECHNICAL INTRODUCTION